Highly flexible organic light-emitting diode display was demonstrated using MoS2 TFTs as an active-matrix backplane.

Electronic applications are continuously developing and taking new forms. Foldable, rollable, and wearable displays are applicable for human health care monitoring or robotics, and their operation relies on organic light-emitting diodes (OLEDs). Yet, the development of semiconducting materials with high mechanical flexibility has remained a challenge and restricted their use in unusual format electronics. This study presents a wearable full-color OLED display using a two-dimensional (2D) material-based backplane transistor. The 18-by-18 thin-film transistor array was fabricated on a thin MoS2 film that was transferred to Al2O3 (30 nm)/polyethylene terephthalate (6 μm). Red, green, and blue OLED pixels were deposited on the device surface. This 2D material offered excellent mechanical and electrical properties and proved to be capable of driving circuits for the control of OLED pixels. The ultrathin device substrate allowed for integration of the display on an unusual substrate, namely, a human hand.

To improve the quantum efficiency and stability of perovskite quantum dots, the structural and optical properties are optimized by varying the concentration of Ni doping in CsPbBr3 perovskite nanocrystals (PNCs). As Ni doping is gradually added, a blue shift is observed at the photoluminescence (PL) spectra. Ni‐doped PNCs exhibit stronger light emission, higher quantum efficiency, and longer lifetimes than undoped PNCs. The doped divalent element acts as a defect in the perovskite structure, reducing the recombination rate of electrons and holes. A stability test is used to assess the susceptibility of the perovskite to light and moisture. For ultra‐violet light irradiation, the PL intensity of undoped PNCs decreases by 70%, whereas that of Ni‐doped PNCs decreases by 18%. In the water addition experiment, the PL intensity of Ni‐doped PNCs is three times that of undoped PNCs. For CsPbBr3 and Ni:CsPbBr3 PNCs, a light emitting diode is fabricated by spin‐coating. The efficiency of Ni:CsPbBr3 exceeds that of CsPbBr3 PNCs, and the results significantly differ based on the ratio. A maximum luminance of 833 cd m–2 is obtained at optimum efficiency (0.3 cd A–1). Therefore, Ni‐doped PNCs are expected to contribute to future performance improvements in display devices.

The epoxidation of propylene to produce propylene oxide (PO) has a vital role in the industrial production of several commercial compounds and the synthesis of numerous intermediates, fine chemicals, and pharmaceuticals. However, the current PO production processes pose significant problems regarding the environment and economy. The direct photo-epoxidation of propylene using molecular oxygen (an ideal oxidant with active oxygen of 100 wt %) under light irradiation is a promising technology to produce PO. This process offers numerous advantages, including the use of simple technologies, low-cost methods, and environmental friendliness. Many efforts have focused on the design of new photocatalyst systems, optimizing the conditions for a photocatalytic reaction, and elucidating the mechanisms of photo-epoxidation. This review is expected to serve as a comprehensive background, providing researchers with insight into the recent developments regarding the direct photo-epoxidation of propylene.