The kinetics of GaN growth by MBE using ammonia as the reactive nitrogen source is studied both under Ga-rich and N-rich conditions. It is shown that adsorption site blocking by Ga and N atoms as well as by surface NH x complexes is a crucial factor to control the growth rate of the crystal. Use of N-rich growth conditions easily achieved in ammonia MBE allows one to increase the GaN growth temperature at least by %80 to 90 K compared to plasma-enhanced MBE, that is favorable to improve optical properties of the grown material.Nowadays group-III nitrides are the subject of an intensive research activity, mainly due to the demonstration of high-brightness blue light emitting diodes and laser diodes [1] as well as of advantages of nitrides for microelectronics [2]. Although a considerable success in development of the group-III nitride technology is achieved, the basic mechanisms of nitride growth are still not completely understood. In particular, it concerns the surface kinetics involved into growth of nitride crystals.In this paper, we report on the results of theoretical and experimental study of GaN growth by MBE using ammonia as the source of reactive nitrogen. N-rich and Ga-rich conditions are compared, and the basic mechanisms controlling the growth kinetics are suggested.GaN layers were grown on (0001) sapphire substrates in a Riber 32P growth system. Ammonia was used as the nitrogen reactive species by thermal decomposition at the growing surface. Gallium is evaporated by a double filament effusion cell. After 5 min nitridation of the sapphire substrate at 950 C under NH
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