Deep electron traps created by gamma-ray irradiation of Au/GaInP Schottky diodes grown by metal-organic chemical vapor deposition (MOCVD) were studied by using deep level transient spectroscopy (DLTS) technique. Three distinct deep electron traps, G1, G2 and G3, were observed in the irradiated GaInP samples. According to the analysis of trap properties in various samples, trap G1 is verified as a bulk defect located at 0.13 eV below the conduction band, while trap G2 and G3 are interface states originated from the junctions of Au/Te-doped GaInP contacts.
To explain the radio mechanism of non-relativistic jets, we investigate a nonlinear process in which ion-acoustic waves scatter into high frequency electromagnetic waves by the plasma having a non-Maxwell distribution with non-relativisical energetic electrons. The calculated reaults show that this mechanism is efficient, and may apply to the radiation of jets from active galaxies and radio bursts of sun flares.
A numerical fitting method based on the deep level transient spectroscopy (DLTS) technique is presented. This method deals with a situation where the standard rate window DLTS is no longer sufficient, i.e., the assumption that the defect density NT is much less than the donor doping density ND is no longer valid. Digitized capacitance transients are numerically fit to extract the electron emission rate, defect density, and energy level. The defect center under study is EL2 in n-type liquid-encapsulated Czochralski gallium arsenide. The fitting method gives an EL2 thermal activation energy of 0.76 eV, different from the 0.82 eV obtained by standard DLTS, which only examines the maximum emission conditions. The advantages, as well as the limitations, of this fitting method are discussed.
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