The p-CdIn 2 Te 4 single crystal was grown in the three-stage vertical electric furnace by using Bridgman method. The quality of the grown crystal has been investigated by the x-ray diffraction and the photoluminescence measurements. From the photoluminescence spectra of the as-grown CdIn 2 Te 4 crystal and the various heat-treated crystals, the (D o , X) emission was found to be the dominant intensity in the photoluminescence spectrum of the CdIn 2 Te 4 :Cd, while the (A o , X) emission completely disappeared in the CdIn 2 Te 4 :Cd. However, the (A o , X) emission in the photoluminescence spectrum of the CdIn 2 Te 4 :Te was the dominant intensity like an as-grown CdIn 2 Te 4 crystal. These results indicated that the (D o , X) is associated with V Te acted as donor and that the (A o , X) emission is related to V Cd acted as acceptor, respectively. The p-CdIn 2 Te 4 crystal was found to be obviously converted into the n-type after annealing in the Cd atmosphere. The origin of (D o , A o ) emission and its TO phonon replicas is related to the interaction between donors such as V Te or Cd int , and acceptors such as V Cd or Te int . Also, the In in the CdIn 2 Te 4 was confirmed not to form the native defects because it existed in the stable form of bonds.
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