We demonstrate hybrid solar cells with ZnO-nanorods (ZnO-NRs) prepared by a low temperature electrochemical method and small molecule organic absorber processed by dry organic vapor phase deposition. A homogeneous coverage of ZnO-NRs by the blend absorber consisting of zinc phthalocyanine (ZnPc) as donor and of fullerene C60 as acceptor is best realized when a thin C60 layer is first inserted at the ZnO-NR/ZnPc:C60 interface. ZnO-NR/C60/ZnPc:C60/MoO3/Ag solar cell devices with efficiencies of 2.8% under an illumination of 100 mW/cm2 at 25 °C are demonstrated.
Single-phase Ga2Se3
films have been deposited with a growth rate of about
30 nm min−1 on
clean and Mo-coated soda-lime glass substrates by chemical close-spaced vapour transport. The use
of HCl/H2
as a transport agent results in a stoichiometric volatilization of the binary
Ga2Se3 powder source material
and the growth of Ga2Se3
films with reproducible composition. The films have been characterized using x-ray
diffraction measurements, scanning electron microscopy observations, energy dispersive
x-ray analysis, x-ray fluorescence spectrometry and elastic recoil detection analysis. A
p-type conductivity was determined by means of the thermoelectric probe method. A
Ga2Se3 band gap
energy Eg = 2.56 eV
has been found by optical measurements.
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