A.F.Ioffe Phys-Tech Inatitute 194021 Leningrad USSR Power commutation of 105-106 wt in to 35OOK do not result in qualitative cha mbnunosecond range is necessary in varinges of switching parameters; the decreaoua fields of modem physics and engines-88 of temperature produces but small ring. It is impossible, however, to obtaSn ( 30$) decrease of td and switching voltesuch fast commutation with ordinary trig-ge. Exposing diode surface to light regoring mechanisms based rrpon the filling mlts in the complete eurpresaing breakin of p-n function space charge region down delay effect and fast r n t c h i n g , so (SCR) by carriers ejected from border emi-the rate of current increase corresponds tter layers because of the saturation of to the rate of voltage increase. In case carriers drift velocity in strong field. when SCR at constant potential completeljr In order to get m c h conmatation it is neoverlspe slightly doped n-layer of p+nn+-cessary to have a triggering mechanism diode the load current impulse is not prb which i s not connected with the carrier sent at all. transfer at long distances. We believe toThe above experimental facta make it have found thia mechanism in studiging possible to suggest the following model avalanche breakdown process. of switching .,Pig.l&shows the acheme of the experiment. Constant potential. Uc ia applied to 1. p+nn+-ailicon diode D in the blocking diCalculation shows that during superrection. The configuration of the diode voltage impulse rise, o n l y a few carriera due to heat generation which are crossing In tranemittiq line ' 2 by Of than critical breakdown field are created a thyratrp key the impulae of running wave Of 2 L P 30 na duration a d of the a* eingle%reakdown channels expanding along on 1 8 cm even at 350OK. They initiate me PolwitY 8s that Of constant diaplaced the field at saturated velocity Ve; indument v c )~ fonmd. The load Of the line CO* ced current 58 quite small m d at r e a RC P 50 Ohm connected i n aeries, wave re& aisted Of diode and mtchiq reaiatance values Re =: 50 ohm does not prevent ,from eietance of tho line being equal to Rd* the Pack 08 inftiatiog carriera allows t o the uperv Ita e rise on the diode. Thug was leaa-than 0,2 na. The regieter* apply voltage to the diode for a few ns, Fig.16 ehowa the load current (11, two or three times as high as static breakdown voltage and create .region at total voltage applied to D and Re; the ' value of etatio avalanche breakdown v01;atanZially atromger than static critical tage Ub of thin diode was 1600 V. Diebreakdown field. This statement is conplacement current i ' to through rature and complete abaence of td when firmed by weak dependence of td on tempe+ho diode aimultaneouely with the oaeet of v6ltsga impulse. Displacement arrent the diode io exposed to light. Fig.2 achematically illuatratee the appliod to the diode has coneidorabl ceoded e%aCic avalanche breakdown vo r ta-OX-tho diode i n atatic conditions at U O ub ge. After aome dolay time t d -2 na volta-(curve 1) and at tho rise of aupervoltago u...
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