Under certain experimental conditions a semiconductor-discharge gap structure can be used as detector for spatiotemporal resolved measurements on IR radiation. With a streak camera system and a semiconductor laser diode (λ=1.3 μm), we investigate experimentally the speed properties of this kind of converter. The experimental results are compared with the predictions of a simple theoretical model.
We suggest a method for spatially and temporally resolved JR-image detection by using a semiconductorgas discharge (SGD-) structure. The operation of the device is based on the conversion of JR-radiation into the visible spectral range. Especially, we will discuss the influence of the system parameters on the operation of the device and propose a technical realization for a real time JR-image conversion camera based on the converter cell in connection with a standard CCD-camera. Jn combination with a gateable CCD-camera or an electron-optical recording technique (e.g. streak-or framing camera), the converter structure could be used for high speed JR-imaging in the microsecond range.
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