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Uncommon low loss Mg 1?5 Zn 0?5 SiO 4 ceramics containing Bi 2 O 3 were investigated by focusing on the roles of Bi 2 O 3 on phase evolution and resultant microwave dielectric properties. While the primary goal of lowering sintering temperature can be easily assumed, some unexpected behaviours of the Bi 2 O 3 containing materials are highlighted with experimental evidences concerning selective dissolution of Zn 2 SiO 4 and grain boundary segregation of gradual Bi richer phases. These evidences are strongly dependent on the content of Bi 2 O 3 and sintering temperature. As an optimal composition, Mg 1?5 Zn 0?5 SiO 4 with 0?5 mol.-%Bi 2 O 3 exhibited promising dielectric properties of a k value y6?8 and a Q6f value y23 300 at a sintering temperature of 1150uC, which is much lower than typical sintering temperature of 1450uC.