A heteroepitaxial film of Cd1-x Mn x Te has been grown on a (100)GaAs substrate by metal-organic vapor phase epitaxy. It is shown that a high quality Cd1-x Mn x Te film can be grown on the GaAs substrate by pretreating the GaAs substrate with triethyl antimony at 650°C. The best full width at half maximum of the X-ray diffraction peak of the Cd1-x Mn x Te film (x=0.12) obtained was 650 arc sec. The effects of the triethyl antimony on the film quality of Cd1-x Mn x Te are discussed.

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Die Abscheidungsbedingungen für nichtkristallines Si3N4 mit hohen Geschwindigkeiten werden untersucht und die Eigenschaften der abgeschiedenen Schichten beschrieben.

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