Herein, we discuss the synthesis and deposition of thin films amorphous zinc oxide (a: ZnO) by custom-designed spray pyrolysis unit for Thin Film Transistor (TFT) application towards NAND gate fabrication. Top gate top contact TFT was fabricated on a glass substrate, a: ZnO as the channel layer, PVA as gate dielectrics material and Al as electrodes. Electrical properties of a: ZnO TFT (W/L = 500/200μm) were probed. The individual transistor with a threshold voltage (Vth = 2.1 V), off and on current (Ioff = order of 10-8A; Ion = 10-3) and Ion / Ioff ratio (order of 105). The linear mobility is calculated and obtained as 3 cm-2/Vs. NAND gate is one of the universal and basic building blocks of a digital circuit. The fabricated NAND gate is subjected to the logic operation in the range of 0 to 10 V was tested. The result implies that it can be utilized for logical circuit operation.
The deposition of polyvinyl alcohol (PVA) dielectric and semiconductor Zinc oxide (ZnO) thin film is developed by custom designed spray pyrolysis unit. The solutions for spray are prepared by PVA and zinc acetate dehydrated as precursor materials. These solutions are deposited on a substrate such as Aluminium coated Teflon and Teflon substrate. The Aluminium is used as Source and drain electrodes. PVA and ZnO deposited on these electrodes is act as the gate oxide and channel layers for thin film transistor (TFT). Gate electrodes are deposited by thermal evaporation of Al using shadow mask method. Finally, top gated TFT is fabricated. The morphology of the films has been characterized by FESEM which confirms that the film was uniform with no cracks. The XRD results confirm the amorphous nature of ZnO thin film. The PVA coatings are also examined for electrical properties like C-V. The thickness and roughness of films have also been measured using optical Profilometer. The optical studies of the film are investigated and the band gap is calculated using the Tauc plot. A study has been performed on ZnO for its electrical characteristics such as and resistivity. In addition, the TFT characteristics like input and output have been carried out.
In this paper, we discuss the deposition of amorphous zinc oxide (a: ZnO) thin film at two different temperatures by spray pyrolysis unit for Thin Film Transistor (TFT) application. The a: ZnO films were studied for its structural, morphology, composition, optical and electrical properties by means of XRD, SEM, EDAX, UV-Visible spectroscopy and I-V measurement system respectively. The film thickness characterized by optical Profilometer. The SEM images exhibit the variation in temperature leads to the crystallinity of the film. The XRD spectrum confirmed the films were amorphous in nature.
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