Articles you may be interested inEpitaxial Ag(001) grown on MgO(001) and TiN(001): Twinning, surface morphology, and electron surface scattering J. Appl. Phys. 111, 043708 (2012); 10.1063/1.3684976Surface kinetics and subplantation phenomena affecting the texture, morphology, stress, and growth evolution of titanium nitride films Epitaxial growth of metastable δ-TaN layers on MgO(001) using low-energy, high-flux ion irradiation during ultrahigh vacuum reactive magnetron sputtering Growth of single-crystal CrN on MgO(001): Effects of low-energy ion-irradiation on surface morphological evolution and physical propertiesWe have grown single-crystal NaCl-structure ␦-TiN x layers with x ranging from 0.67 to 1.00 on MgO͑001͒ at 700°C by ultra-high-vacuum reactive magnetron sputtering of Ti in mixed Ar/N 2 discharges in order to investigate microstructural evolution and the physical properties of TiN x as a function of the N vacancy concentration. High-resolution x-ray diffraction and transmission electron microscopy results show that all layers grow with a cube-on-cube epitaxial relationship to the substrate, (001) TiN ʈ (001) MgO and ͓100͔ TiN ʈ ͓100͔ MgO . The relaxed lattice parameter a o (x) decreases linearly from 4.240 Å with xϭ1.00 to 4.226 Å with xϭ0.67. Stoichiometric TiN͑001͒ layers are fully relaxed at the growth temperature while layers with 0.67рxр0.92 are fully coherent with their substrates. Surface morphologies vary dramatically with x. TiN x (001) layers with x ϭ0.67-0.82 have very flat surfaces arising from large cation surface diffusion lengths approaching values corresponding to step flow. However, the surfaces of the TiN 0.92 (001) and TiN 1.00 (001) layers, which were grown at higher N 2 partial pressures, consist of a periodic two-domain ripple structure along the ͗110͘ directions due to kinetic roughening associated with lower cation surface mobilities resulting from higher steady state N coverages. TiN 1.0 (001) layers grown in pure N 2 exhibit growth mounds that are predominantly square with edges aligned along the ͗110͘ directions. The room-temperature resistivity, 13 ⍀ cm with xϭ1.00, increases from 52 ⍀ cm for TiN x (001) layers with xϭ0.92 to 192 ⍀ cm with xϭ0.67, due primarily to increased carrier scattering from N vacancies.

Poly(ethylene terephthalate) (PET) fabrics were modified by diffusing vinyl amide monomers, divinyl crosslinker N,N′‐methylenebisacrylamide (MBA) and photoinitiator benzophenone (BP) into the surface of the PET substrate, which was swollen in a mutual solvent. Subsequent in situ photo‐polymerization resulted in the stable entrapment of the polyamides within the surface of the PET. The PET/polyamide systems produced by this technique were physically inseparable except by melting or dissolving PET. It is referred to as a sequential interpenetrating polymer network (IPN): thermoplastic semi‐IPN. Analyses of these materials by infrared spectroscopy, X‐ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) confirmed the successful incorporation of polyamide and revealed that the polyamide is also uniformly distributed along the PET yarns. Modulated differential scanning calorimetry (MDSC) indicated a certain degree of phase‐mixed structure between PET and polyacrylamide, despite the thermodynamic incompatibility of two polymers, which could be induced to separate upon heating above the melting point of PET. These materials were stable upon Soxhlet extraction with distilled water for 72 h, and also with methanol for 24 more hours. After being converted to N‐halamine via chlorine bleaching, these materials can bring 100% reduction of the hospital acquired methicillin‐resistant Staphylococcus aureus within 10 min contact.magnified image

X-ray photoelectron spectroscopy (XPS), low energy electron diffraction, and cyclic voltammetry have been used to study the adsorption of iodine on the Ru(0001), air, and water exposure to both clean and iodine covered Ru(0001) surfaces and the stability of the iodine adlayer during Cu overpotential electrodeposition. A normalRufalse(0001false)­false(3×3false)R30°­I structure was observed after I2 vapor exposure of the Ru(0001) surface at room temperature. The normalRufalse(0001false)­false(3×3false)R30°­I structure was found to be stable toward ambient air and water exposure. The I ad-layer passivates the Ru(0001) surface against significant hydroxide, chemisorbed oxygen, or oxide formation during exposure to air. Immersion of I-Ru(0001) results in greater hydroxide and chemisorbed oxygen formation than air exposure. A saturation coverage of I on a Ru(poly) electrode similarly passivated the Ru surface against oxidation upon exposure to water vapor over an electrochemical cell in an ultrahigh vacuum electrochemistry transfer system. Studies with combined electrochemical and XPS techniques show that iodine surface adlayer remained on top of the surface after cycles of overpotential electrodeposition/dissolution of copper on Ru(0001). These results indicate the potential bifunctionality of the iodine layer to both passivate the Ru surface in the microelectronic processing and to act as a surfactant for copper electrodeposition. © 2004 The Electrochemical Society. All rights reserved.

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