The thermal expansion coefficient variations in Hg, -.Cd,Te (MCT) and Hg, -,Zn,Te (MZT) are analyzed between 4 and 280 K. The phonon density of states (DOS) is modelled with seven Einstein peaks whose weight is adjusted to fit the specific heat variations. The mean Gruneisen coefficient associated with each peak is then deduced from a fit of the experimental linear thermal expansion coefficients. The variation with x of these Gruneisen coefficients allows to compare the bond strengths in MCT and MZT. A better stability of MZT as compared to MCT is deduced.
We report the results of C-V measurements performed on several metal1 insulatorlHgZnTe structures in which the insulatorlHgZnTe interface is treated according to different passivation processes. The first passivation process corresponds to the deposition of a dielectric layer (ZnS or SiO) on an etched HgZnTe surface. For the second process, a native oxide film is grown anodically starting from the electroetched HgZnTe surface in an electrochemical cell. Two different basic electrolysis solutions (KOH and C,H,,NO) are used. The interface properties are determined directly from the C-V experiment at 90 K. The fiat-band voltage occurs at a negative bias for all process and MIS devices have a relatively low concentration of positive fixed surface charge density going from 2 x 10"to 3 x 10" cm-'. The narrow hysteresis in the capacitance-voltage characteristics indicates the presence of slow trapping effects. Temperature-aging experiments under bias reveal that mobile Ionic charges have a negligible influence on the shift in the C-V curves. The energy density of interface states is obtained by Terman's analysis. Passivations with Si0 deposition and with an anodic oxide (KOH) leati to the best electrical interface properties on the investigated samples
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