Articles you may be interested inThe surface-plasmon-resonance and band bending effects on the photoluminescence enhancement of Agdecorated ZnO nanorods J. Appl. Phys. 116, 063108 (2014) The recombination dynamics of neutral donor bound excitons (D o X: I 4 , I 6/6a ) and near band edge defect-related emission in solution grown ZnO nanorods are investigated using steady state and time-resolved photoluminescence (PL) measurements. The effects of annealing are also studied. Low temperature steady state PL shows a systematic removal of the I 4 line after annealing at 450 C and the subsequent domination of I 6a in these PL spectra. Additionally, the time decay of the I 4 , I 6/6a, free exciton (FX), and basal plane stacking fault-related (BSF) PL transitions are studied as a function of annealing temperature. For the various annealing temperatures studied, the PL decay is described by a bi-exponential profile with a fast component (contribution from the surface) and slow component (related to bulk recombination). The fast component dominates in the case of as-grown and low temperature annealed samples (anneal temperatures up to 300 C), suggesting the presence of surface adsorbed impurities. For samples annealed above 400 C, the effects of the surface are reduced. The sample annealed at 850 C produced an overall enhancement of the crystal quality. The underlying mechanisms for the observed PL characteristics are discussed based on near surface band bending caused by surface impurities. V C 2014 AIP Publishing LLC.

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