This work combines the advantages of SnS and CZTSSe to constitute the SnS/CZTSSe heterojunction solar cells, and the effects of various factors on cell performance were studied by using numerical simulation. The results show that the optimal thickness of CZTSSe and SnS are 0.1 μm and 2.0 μm, respectively. Furthermore, the optimal doping concentrations of CZTSSe and SnS are 1×1017 cm-3 and 1×1016 cm-3 , respectively. In addition, defect states have little impacts on the cell performance when the density of Gaussian defect states of CZTSSe and SnS are less than 1×1016 cm-3 and 1×1014 cm-3 , respectively, and the density of tail defect states of these two materials are both less than 1×1019 cm-3 eV-1 . Moreover, the potential conversion efficiency of the SnS/CZTSSe heterojunction solar cells can reach 23.92%. Therefore, the SnS/CZTSSe heterojunction solar cell may be a promising photovoltaic structure
Hydrogenated amorphous silicon/crystalline silicon heterojunction solar cells are currently a hot research topic in the field of photovoltaics, where parasitic absorption due to hydrogenated amorphous silicon layers has not been effectively addressed. For this reason, amorphous silicon/crystalline silicon heterojunction solar cells with localized p-n junctions (HACL cells) have been designed, which can significantly improve the parasitic absorption losses while maintaining the original advantages such as high open-circuit voltage. In this paper, we mainly use ATLAS 2D simulation software to conduct device simulation and parameter optimization of HACL cells, and simulate the effects of factors such as passivation inlet region width, insulation layer width, emitter width, passivation inlet region doping concentration and substrate doping concentration on the cell performance, respectively.
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