We report on the optical and luminescence properties of pentacene films deposited on n-Si by thermal evaporation at room temperature, 40, 60, 80, and 120 °C. Ellipsometric spectra of the films deposited at room temperature and 60 °C exhibited a main absorption peak at 1.82 eV and additional weak features at higher energy levels. Photoluminescence spectra taken at room temperature revealed band-to-exciton and band-to-acceptor transitions at 1.7 and 1.76 eV, respectively. An electroluminescence band was also observed near 1.65 eV under a forward bias from p-pentacene/n-Si diodes which show strong rectifying behavior.

No abstract