The present paper theoretically investigates features of quantum dynamics for localized plasmons in three-particle or four-particle spaser systems consisting of metal nanoparticles and semiconductor quantum dots. In the framework of the mean field approximation, the conditions for the observation of stable stationary regimes for single-particle plasmons in spaser systems are revealed, and realization of these regimes is discussed. The strong dipole-dipole interaction between adjacent nanoparticles for the four-particle spaser system is investigated. We show that this interaction can lead to the decreasing of the autocorrelation function values for plasmons. The generation of entangled plasmons in a three-particle spaser system with nonlinear plasmon-exciton interaction is predicted. For the first time the use of an external magnetic field is proposed for control of the cross-correlation between plasmons in the three-particle spaser system.
The nonlocal electrons heating in transistor heterostructures based on gallium nitride and arsenide is compared. It is shown that if, in comparison with a pure bulk material, in the case of GaAs double doped pseudomorphic heterostructures, the real space transfer of electrons significantly reduces their drift velocity overshot in the region of a strong field, then for GaN-based heterostructures, the decrease of the drift velocity overshot in the studied cases does not exceed 30%.
The first results of double -channel heterostructures with donor-acceptor doping and systems of alternating thin layers of AlAs/GaAs forming additional digital potential barriers study are presented. It is shown that due to the peculiarities of real space electron transfer in the proposed design, when the surface density of electrons with high mobility is doubled compared to traditional single-channel bilaterally doped heterostructures, even in the absence of digital barriers, the drift velocity overshot does not decrease. The introduction of digital barriers significantly increases the of electrons drift velocity overshot when they fly into the region of a strong field, bringing the drift velocity overshot in the corresponding heterostructures closer to the theoretical limit for the model used – the drift velocity overshot in the undoped bulk material of the channel.
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