By measuring the extraordinary Hall effect on a series of naturally oxidized Pt3 nm/Co90Fe10 0.6 nm/Al tAl samples with 0<tAl<1.2 nm, a first crossover from in-plane to perpendicular magnetic anisotropy is observed when tAl is varied from 0 to 0.2 nm. The CoFe magnetization remains out of plane for 0.2<tAl<0.5 nm. When the Al thickness is further increased, a second crossover back to in plane takes place. In a series of samples in which the Al thickness is kept constant, the same behavior is observed as the time of exposure to an oxygen plasma is varied. The results clearly indicate that the degree of oxidation of Al at the CoFe/AlOx interface has a dramatic effect on the magnetic anisotropy of the transition-metal layer. These sharp crossovers of anisotropy provide a very accurate and convenient way to monitor the oxidation of the tunnel barrier in magnetic tunnel junctions. This technique is also applied to characterize the oxidation kinetics of various ultrathin metallic layers as well as the aging effect in alumina barriers.
Pt/Co/M sandwiches (M=Al, Ta, Cr) were prepared by sputtering. The M capping layer was oxidized either by natural oxidation in air or by exposure to an oxygen plasma. By measuring the extraordinary Hall effect in these systems, we observed that the magnetic anisotropy of the Co electrode is extremely sensitive to the degree of oxidation of the capping layer. In particular, when M=Al, the magnetic anisotropy is found in plane when the AlOx layer is under or overoxidized whereas it is out of plane when this oxide layer is stochiometric alumina. The conditions of oxidation which give the perpendicular anisotropy in Pt/Co/AlOx are found to be the same than those which lead to a maximum of specular reflection at Co/AlOx interface in Co/Ru/Co/Cu/Co/AlOx synthetic spin-valves. This crossover of anisotropy therefore provides a very useful way for controlling the oxidation of tunnel barriers. Furthermore, this phenomenon can be used to study the aging of naturally oxidized tunnel junctions exposed to air, and it is also observed with other capping materials such as Ta or Cr.
A new NbN multilayer technology has been developed on 3 inch diameter R-plane sapphire substrates, for combining on-chip fast RSFQ circuits with GHz bandwidth optical links. The circuits take advantage of two high quality (110) NbN layers sputtered epitaxially on sapphire at 600°C and selectively patterned: a 400 nm thick layer (LL-250 nm at 6K) acts for the ground-plane and microbridge photodetectors are made of a 3.5-8 nm thick NbN epilayer with T, above 11 K. Innovative dielectrics formed of 10 nm thick MgO sputtered on top of 200 nm S O z layers are found to improve significantly the superconductivity of NbN junction electrode lines deposited below 300°C. Good quality, hysteretic 2 pm2 area, NbN/MgO/NbN junctions with high J, (up to 50 kA/cm2) are obtained with very large gap voltage (6.20 mV) and low sub-gap leakage current (V,,, > 15 mV) at 4.2 K. At 11 K such junctions are found self-shunted (J,-10 kA/cm2) with RJ, above 0.5 mV and with low J, spread in arrays. J, can be adjusted (reduced) without any detrimental effect on the junction quality or spread by annealing at 250°C.
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