This letter presents a type of infrared detector named the nBn detector. The nBn design essentially eliminates Shockley-Read-Hall generation currents. The result is greatly reduced dark current and noise, compared to other midwave infrared detectors, such as p-n photodiodes. This enables the nBn to operate at background-limited infrared photodetection conditions at significantly higher temperatures than conventional midwave infrared detectors and have greater detectivity near room temperature. The nBn is demonstrated in InAs and InAsSb materials, exhibiting cutoff wavelengths of 3.4 and 4.2μm, respectively.

Thermal generation rate in quantum dots ͑QD͒ can be significantly smaller than in quantum wells, rendering a much improved signal to noise ratio. QDs infrared photodetectors were implemented, composed of ten layers of self-assembled InAs dots grown on GaAs substrate. Low temperature spectral response shows two peaks at low bias, and three at a high one, polarized differently. The electronic level structure is determined, based on polarization, bias, and temperature dependence of the transitions. Although absorbance was not observed, a photoconductive signal was recorded. This may be attributed to a large photoconductive gain due to a relatively long lifetime, which indicates, in turn, a reduced generation rate.

SILK is a relatively simple device to use, with a low rate of technical and clinical complications and a high short-term aneurysmal occlusion rate. In aneurysms smaller than 15 mm, the results are excellent. Results are also encouraging in the larger aneurysms, taking into consideration their complexity. The device characteristics and mainly its drawbacks must be well known by the users.

Although mass effect remains after endovascular packing, oculomotor nerve dysfunction improves comparably to the recovery observed after surgical clipping. Contrary to previous reports, typical residual oculomotor nerve deficits persist. Older age and the presence of microvascular risk factors seem to be detrimental to ONP recovery.

Treatment of arteriovenous malformations (AVM) of the brain is challenging due to the size and location of the nidus-proper and its proximity to the cerebrovascular circulation. Recent advances in catheter techniques and new embolization materials such as Onyx (a liquid agent that is less adhesive and slowly polymerizing) have increased the probability of achieving obliteration. When planning radiosurgical cases following such embolization, however, one must be cognizant of the distortions introduced by this novel substance on imaging studies. A sample of Onyx was irradiated to define the attenuation per mm thickness. The difference in attenuation compared to water was determined. Dose calculations were performed using 3 methods of inhomogeneity corrections. Homogeneous calculations were compared to "standard" heterogeneity corrections and to "modified" heterogeneity corrections by assigning individual electron densities to the normal brain and the Onyx. The difference between the attenuation of water in comparison to the Onyx was approximately 3% for beam energy of 6 MV. Best calculation results were achieved when using the modified inhomogeneity corrections which were based on the actual attenuation of the Onyx. The use of Onyx caused significant image artifact on MR and especially CT. As such, a correction must be manually introduced into the planning system to account for this potential error. Otherwise, dose calculation may be unreliable and could have dire consequences for patients receiving high doses of radiotherapy.

BACKGROUND AND PURPOSE: Endovascular embolization with Onyx is one of the tools used in the treatment of intracerebral AVMs. The recent introduction of a new microcatheter with detachable tip has led us to adopt a new treatment approach by using endovascular embolization with Onyx as the main treatment for brain AVM with curative intent. The purpose of the present study is to evaluate our initial results by using this new treatment strategy with special emphasis on the safety and feasibility of the technique.

Control of dark current mechanisms is essential to improving the performance of infrared photodetectors and many other electronic devices. Unipolar barriers can readily be applied to practically and efficiently filter out multiple dark current components exhibited by infrared photodetectors. Via careful placement of unipolar barriers in a standard photodetector architecture, effective suppression of dark currents due to surface leakage, direct band-to-band tunneling, trap-assisted tunneling, and Shockley-Read-Hall generation is demonstrated. We present unipolar barrier photodiodes exhibiting six orders of magnitude improvement in RoA and near Auger-limited device performance.

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