The electrical activity of grain boundaries in multicrystalline silicon grown from metallurgical sil icon by the Bridgman method is investigated by the method of electron beam induced current. The main ten dencies of atypical manifestation of the local electrical activity of Σ3{111} and Σ9{110} special boundaries are revealed. The structural features of the grain boundaries after selective etching and the impurity distribution characteristics in multicrystalline silicon are determined by the methods of electron backscattering diffrac tion and electron probe microanalysis.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.