Boron-doped Si epilayers were grown by molecular beam epitaxy (MBE) using an elemental boron source, at levels up to 2 X 102' cm -3, to elucidate profile control and electrical activation over the growth temperature range 450-900 "C. Precipitation and surface segregation effects were observed at doping levels of 2 X 102' cm -3 for growth temperatures above 600 "C. At growth temperatures below 600 "C, excellent profile control was achieved with complete electrical activation at concentrations of 2 x 102' cm -3, corresponding to the optimal MBE growth conditions for a range of Si/Si,Gel --x heterostructures.
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