Magneto-photoluminescence (PL) is used to study carrier transfer between self-assembled quantum dots (QDs) fabricated in the form of two adjacent QD layers separated by a thin barrier, one layer consisting of CdSe QDs and one of CdMnSe QDs in a ZnSe matrix. CdMnSe is a diluted magnetic semiconductor (DMS). In contrast to typical behavior of many low-dimensional DMS systems in which the application of a magnetic field B dramatically increases the PL intensity, in double-layer structures described above we observed a striking decrease of the PL intensity as a function of B. This effect indicates carrier tunneling from the CdSe to the CdMnSe dots as the ground state in the latter is lowered via the large Zeeman shift of the CdMnSe band edges.
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