In this paper, the integration scheme is employed to solve a coupling problem of transient heat conduction and displacement due to thermal deformation. Based on the resulting displacement, gap or contact pressure on the interface of two thermoelastic bodies in imperfect contact is estimated. Such information is then used to determine the interfacial heat transfer between the two thermoelastic bodies. This again affects the temperature distribution and thus the thermal deformation. In the course of heat transfer and thermal deformation, effect of thermal rectification also is taken into account. Numerical solutions of transient and steady-state quantities including gap formation, normal stress, and temperature are demonstrated for a pair of stainless steel and aluminum with conforming shapes. Such an analysis of conduction-deformation interaction based on a finite-difference-like scheme has not been studied in the past.

Diamond deposition on an anisotropic etched Si and ion implanted Si surfaces have been examined here for the first time. Local facets on an anisotropic etched surface shows no nucleation of diamond. Synthetic diamond, in contrast, has been able to nucleate on an As+ or Si+ ion implanted Si substrate without diamond abrasive pretreatment. Selective deposition of diamond occurs only for low dose ion implantation, 100 keV 1014 cm−2, but not for high dose ion implantation, 100 KeV 1016 cm−2. Strain is proposed as the main reason for nucleation of diamond on the ion implanted Si substrates.

This paper presents a finite element solution to the problem of low Peclet number fluid flow in the thermal entrance region of a round pipe. The velocity is assumed to be laminar and fully developed throughout the pipe and the fluid temperature is kept uniform atX = —∞. The pipe wall is adiabatic at X ≤ 0 and cooled convectively at X ≥ 0. The solutions include temperature distributions and Nusselt numbers for the parameters, Bi = 0.04, 0.4, 4, 20 and Pe = 1, 3, 5, 10, 20, 30, which are in excellent agreement with the existing analytic solution except in the region near the singular point Δ A temperature discrepancy in the analytic solution at this point is physically impossible. The finite element method overcomes this mathematical difficulty and shows a greater value in the Nusselt number due to a higher wall temperature at X ≥ 0.

Enhanced nucleation density of diamond deposition on ion-implanted Si(100) substrate without diamond abrasive pretreatment has been achieved for the first time. The optimum experimental parameters used to achieve good selectivity of diamond on implanted Si(100) were 100 keV P" ion with a dose range between 10 ~4 cm"-' and 10 ~: ~ cm -~-. Selectivity of diamond deposition also depended on thickness of the SiO2 film, which was used as a mask to prevent the Si(100) surface from ion-implantation induced damages. The effects of ion species, ion energy, ion dosage, and annealing temperature on the selective deposition of diamond films also have been discussed.

The combined effects of axial conduction and solidification on heat transfer and pressure drop in pipe flows are investigated by the use of a modified Galerkin finite element method. To allow for the upstream heat conduction, the domain of study is extended from X = ‐∞ to X = ‐∞ as has been done in previous analyses. As a preliminary study on the effect of axial conduction, the present investigation assumes a superheat ratio that is sufficiently large (To > Tf or Tw ≈ Tf) such that solidification begins at a location near X = 0. For numerical convenience, the infinite domain ‐∞ ≤ X ≤ ∞ is transformed onto a finite domain ‐1 ≤ z ≤ 1. The energy equation for the liquid‐phase is then solved by a modified Galerkin finite element method. For better numerical stability, a procedure is proposed for controlling the numerical error that might propagate from the singular point (X, R) = (O, Ro). The profile of the solid‐liquid interface, the heat transfer rate and the pressure drop are presented for various values of Peclet number, Pe = 1, 3, 5, 10 and 30, and for the modified superheat ratio, c = 0.1, 0.5, 5.0, and ∞.