We have calculated the intervalence band absorption loss coefficients of the active layer for InP-based long wavelength laser diodes lasing in the range of 1.2–1.55 μm. The calculated results show that, as the wavelength of laser diode becomes longer, the loss coefficient of the laser diode rapidly increases toward 1.55 μm, which coincides with the experimental data reported. We also describe the dependence of the loss coefficient on temperature.
We have calculated intervalence band absorption loss coefficients for InP with various hole densities at 297 and 400 K. The calculated values agree well with the reported measured values at 297 K. However, the calculated values are much smaller than the reported measured values at 400 K. We discuss the difference between our calculated values and the reported calculated values at 297 K and the discrepancy between our calculated values and the reported measured values at 400 K.
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