Free-standing dysprosium–silicide nanowires can be formed on Si(001) by self assembly. It is shown that the wires consist of anisotropically strained hexagonal DySi2 with the c axis aligned perpendicular to the wires. The surface is characterized by a 2×1 reconstruction due to the formation of Si dimer chains.
We present cross-sectional scanning tunneling microscopy results of self-organized In0.8Ga0.2As quantum dots covered by an In0.1Ga0.9As film inside a GaAs matrix prepared by metalorganic chemical vapor deposition. From images of quantum dots with atomic resolution, we determine a spatial distribution of the In composition within the dots with a shape of a reversed truncated cone. The wetting layer and the overgrown In0.1Ga0.9As layer show vertical intermixing.
Articles you may be interested inComment on "Structure and electronic properties of dysprosium-silicide nanowires on vicinal Si(001)" [Appl.Formation of dysprosium silicide nanowires on Si(557) with two-dimensional electronic structure
We present cross-sectional scanning tunneling microscopy results of GaSb quantum dots in GaAs, grown by metalorganic chemical vapor deposition. The size of the optically active quantum dots with base lengths of 4–8 nm and heights of about 2 nm is considerably smaller than previously published data obtained by other characterization methods. The local stoichiometry, obtained from atomically resolved images, shows a strong intermixing in the partly discontinuous wetting layer with an average GaSb content below 50%, while the GaSb content of the partly intermixed quantum dots is between 60% and 100%.
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