Ion-implanted planar-gate power GaAs MESFETs have been optimized for single-voltage-supply operation. Recessed gate MESFETs suffer from variations in pinch-off voltage. The optimized ion-implanted planat-gate power GaAs MESFET has on 80 keV 4.2 X 10(12)/cm(2) Si channel with a 120 keV 1.7 X 10(12)/cm(2) Be p-buffer. (C) 2001 John Wiley & Sons, Inc
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