Fabrication and characterization of silicon field emitter arrays with focusing electrode by the chemical mechanical polishing process Process design and emission properties of gated n + polycrystalline silicon field emitter arrays for flat-panel display applications
Tip surfaces of n-type Si field emitter arrays (FEAs) have been anodized to obtain n-type porous layers on the top surfaces of the Si emitters. The gate voltage required for emission could be lowered by tip anodization and the emission current was enhanced by a factor of up to 10. Fowler–Nordheim plots for the FEAs before and after tip anodization revealed that the work function of the tip could be decreased and the field conversion factor could be increased by the process.
n-type porous Si field emitter arrays (FEAs) have been fabricated by tip surface anodization to improve the emission characteristics. The gate voltage required for emission could be lowered by tip anodization and the emission current was enhanced by a factor of up to 10. Fowler-Nordheim plots for the FEAs before and after tip anodization revealed that the work function of the tips could be decreased and the emission from various FEAs with initially different characteristics could be homogeneously improved by tip surface anodization.
We have developed the technique of fabricating triode structure with simple stacking method by forming an extremely smooth CNT layer and by activating CNT with a unique laser irradiation method. A test panel proves good emission property and uniformity.
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