A thin-film transistor with a 5 nm-thick indium oxide active layer deposited by plasma-enhanced atomic layer deposition (PEALD) showed outstanding performance even with a polycrystalline phase.

In this paper, we present the architecture of oxide TFT selected from diverse TFT structures for the application to the high resolution mobile display. Due to the selection of proper materials and process, we can achieve highly stable BCE TFT and show the promise of vertical oxide TFT with the smallest TFT footprint.