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GaAs layers were grown on patterned (1̄1̄1̄)B substrates having (1̄2̄2̄)A sidewalls with various arsenic fluxes at a fixed temperature of 480°C by metalorganic molecular beam epitaxy (MOMBE) using trimethylgallium (TMGa) and metal arsenic. Vertical growth rate on the top and bottom (1̄1̄1̄)B surfaces decreased rapidly as the arsenic flux was increased. For arsenic fluxes of 2.0×10-3 Pa and more, only lateral epitaxy on the (1̄2̄2̄)A sidewall was achieved. Real-time scanning microprobe reflection high-energy electron diffraction (µ-RHEED) observations showed that the surface smoothness of the epitaxial layer was maintained throughout the growth time under the optimized condition.

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The MO spectra of GMR structures with capping layers, Si/SiO2/bottom electrode/TbFeCo (9 nm)/Cu (4 nm)/ Co (0.1 nm)/Pt (1.1 nm)/(Pt (1.1 nm)/Co (6 nm)!4)/cap (cap = Ta, Au, Pt (3 nm)), were studied. We found that the optical constants and Kerr spectra exhibited different behaviors for all samples. The differences in the optical constants of these samples were analyzed by means of optical simulation. The MO spectrum is discussed in terms of simulation carried out by the virtual optical constant method for (PtCo)/cap (cap = Ta, Au, Pt (3 nm)).