We have fabricated superconductor-insulator-normal metal (SIN) tunnel junctions with c-axis oriented YBCO thin films as the superconducting electrodes, and studied the tunneling characteristics of the junctions by measuring the zero-bias junction resistance as a function of temperature and dI/dV as a function of the bias voltage. Measured junction resistance showed a characteristic tunneling properties with a strong semiconducting background which is ascribed to the imperfect tunnel barrier. dI/dV curves indicated gap structures at 27 mV and 4.5 mV, respectively, with a parabolic background.Phys. B 73, 32
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