Spin state controlling has always been a focus of intensive studies due to its importance for novel effect exploration and information technology. Complex oxides with competitive mechanisms are suitable objects of study for this purpose due to their susceptibility to external stimuli. Perovskite cobaltate La1-xSrxCoO3 is one of such oxides. Combined effects of lattice strains and hole-doping have been studied for the LSCO films with 0 ≤ x ≤ 0.5. It is found that the lattice strain, either tensile or compressive, destabilizes the ferromagnetic (FM) state of the epitaxial films, leading to a nonmagnetic state that extensively exists in a doping window embedding deep into the range of the FM phase in bulk counterparts. Density functional theory calculations reveal a distinct spin state transition due to the combined effects of lattice distortion and hole-doping, explaining the unique magnetic behaviors of LSCO.

The film thickness dependent transport properties of the LaNiO3 (LNO) layer epitaxially grown on LaAlO3/SrTiO3 (LAO) 2-dimensional electronic gas (2DEG) have been investigated. The ultrathin LNO films grown on the 2DEG have a sheet resistance below the values of h/e2 in all temperature ranges. The electron density is enhanced by more than one order of magnitude by capping LNO films. X-ray photoelectron spectroscopy shows that the interface undergoes unambiguous charge transfer and electronic reconstruction, leading to modulation doping of such atomically engineered complex oxide heterointerfaces. The polar-catastrophe of the 2DEG is directly linked to the electronic structure and transport properties of the LNO. The transport properties can be well modulated by the thickness of the LAO in the 2DEG, and the data can be well fitted with the polar-catastrophe scenario. These results suggest a general approach to tunable functional films in oxide heterostructures with the 2DEG.

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Parallel and vertical interfaces in vertically and parallelly aligned nanocomposite thin films have been shown to be an effective method to manipulate functionalities.