We report on the observation of LaGuerre-Gaussian (LG) beam profiles of photonic quantum ring (PQR) hole-type lasers. Naturally formed LG beams are highly valuable for optical tweezering applications, like transporting or manipulating DNA molecules. Various devices with different injection currents and hole diameters have been analyzed.Index Terms-LaGuerre-Gaussian, optical trapping, optical tweezers, photonic quantum ring, PQR hole-type lase.
We have succeeded in fabricating one mega (M) photonic quantum ring (PQR) hole laser array.Each pixel of the PQR hole laser chip has very low transparent (80 nA) and threshold (300 nA) currents due to photonic crystal-like cooperative effects. The envelope of the multi-peak PQR hole laser spectrum is typically about 2 nm wide.
We report on the first observation of "hole" whispering gallery lasers from semiconductor microcavities with three dimensional optical confinement, with thresholds potentially reducible to micro-to-nano ampere regimes according to a quadratic size-dependent reduction, due to ideal quantum wire properties of the naturally formed photonic quantum rings before imminent recombination in a dynamic steady state fashion. If the device size grows over a critical diameter, the quantum ring whispering gallery then begins to disappear. However, cooperative small hole arrays like 256×256 quantum ring emitters avoid the criticality and open a possibility of constructing practical dense electro-pumped micro-to-nano watt emitter arrays, amenable to mega-to-giga ring emitter chip development via present fabrication techniques.PACS numbers : 42.55.Sa, 42.60.Da, 78.66.-w Lord Rayleigh's "concave" whispering gallery (WG) mode phenomenon [1] has triggered the optoelectronic large-scale integration (LSI) circuit research for applications in next-generation photonic switching and interconnect technologies to remove the so called electronic bottleneck, by developing low-threshold two dimensional (2D) whispering gallery mode semiconductor lasers in the last decade [2][3][4][5]. The LSI quest for electro-pumped emitter arrays has also evolved into the array development of 1D vertical cavity surface emitting lasers, for instance the 16×16 array work with a limited performance due to thermal instabilities [6]. The laser array integrations in fact turned out to be inferior even to earlier decade-long efforts of the quantum well Stark shift modulator LSI developments undertaken since mid 1980s [7]. Recent reviews on the 3D optical interconnect technology now predict that the
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