In this work was investigated a simple laser doping method employing doped oxide glass films as dopant source (up to 2.1021cm−3) which are deposited onto silicon by the spin coating technique. Both short (20 ns) and long (200 ns) pulse duration excimer laser beams were used to deposit a large amount of energy in a short time onto the near-surface region. Under suitable conditions, the irradiation leads to surface melting and dopant incorporation by liquid phase diffusion from the surface. Boron distribution profiles in the two pulses duration regimes were studied as well as their electrical properties, and the junction formation of less than 20 nm in depth was demonstrated.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.