The kinetics of molecular-beam epitaxy are examined by means of Monte Carlo simulations in combination with a new approach for monitoring surface growth, i.e., by calculating the evolution of the surface step density. The evolution of the step density is shown to have a remarkable correspondence to that of the measured reflection high-energy electron diffraction (RHEED) specular spot intensities for III-V semiconductor compounds. We study growth in a variety of systems, including flat and stepped surfaces, as a function of substrate temperature and draw several conclusions concerning the relation between RHEED measurements, kinetics, and growth quality. The range of validity of the kinematic approach to RHEED is discussed and the importance of multiple scattering in the high step density regime is highlighted.
Phys. Rev. Lett. 58, 2235 (19871.In reviewing previous work on computational modeling of growth during molecular-beam epitaxy, we incorrectly stated that Madhukar and Ghaisas (Refs. 7,[9][10][11] and Singh and Bajaj (Ref. 8) associate reflection high-energy electron diffraction oscillations with the growth rate, rather than considering them indicative of growth morphology.We thank Professor Singh and Professor Madhukar for their correspondence and we regret any confusion that may have arisen.
Instability and Deformation of a Spherical Vesicle byPressure. OU-YANG ZHONG-CAN and W. HELFRICH [Phys. Rev. Lett. 59, 2486 (1987].
M.A. Peterson has pointed out to us that we misinterpreted him. An ellipsoidal shape at fixed volume and area can indeed wander freely in a multidimensional space of ellipsoidal configurations of equal energy, as he proposed in Ref. 10. We also overlooked that in the same article he considered the deformation of the sphere at constant area. Our Eq. (14) holds generally, i.e., regardless of whether volume, surface area, or mean radius ro of the vesicle is kept constant during the deformation. It presupposes a reservoir of surface area, volume, or both, respectively.
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