Theoretical studies have indicated that truss core panels with a tetragonal topology support bending and compression loads at lower weight than competing concepts. The goal of this study is to validate this prediction by implementing an experimental protocol that probes the key mechanical characteristics while addressing node eccentricity and structural robustness. For this purpose, panels have been fabricated from a beryllium-copper alloy using a rapid prototyping approach and investment casting. Measurements were performed on these panels in flexure, shear and compression. Numerical simulations were conducted for these same configurations. The measurements reveal complete consistency with the stiffness and limit load predictions, as well as providing a vivid illustration of asymmetric structural responses that arises because the bending behavior of optimized panels is dependent on truss orientation. Ó

Large tensile stresses usually exist in metallic interconnect lines on silicon substrates as a result of thermal mismatch. When a current is subsequently passed any divergence of atomic flux can create superimposed stress variations along the line. Together, these stresses can significantly influence the growth of voids and therefore affect interconnect reliability. In this work, a high-resolution (-2 pm) optical spectroscopy method has been used to measure the localized stresses around passivated aluminum lines on a silicon wafer, both as-fabricated and after electromigration testing. The method is based on the piezospectroscopic properties of silicon, specifically the frequency shift of the Raman line at 520 R cm-'. By focusing a laser beam at points adjacent to the aluminum lines, the Raman signal was excited and collected. The stresses in the aluminum lines can then be derived from the stresses in the silicon using finite element methods. Large variations of stress along an electromigration-tested line were observed and compared to a theoretical model based on differences in effective diiusivities from grain to grain in a polycrystalline interconnect line.

The development of stress during electromigration along Al lines, constrained within a dielectric in a coplanar test configuration, is measured. It is shown that, above a certain threshold current density, cracking of the dielectric is induced in the vicinity of the anode. Cracking of the dielectric leads to loss of mechanical constraint on the aluminum conductor which, in turn, leads to increases in electrical resistance with continued current flow. The electromigration-induced stresses are determined from the measured frequency shifts induced in a novel ruby strain sensor embedded immediately beneath the interconnect line on a sapphire substrate. The transparency of the sapphire substrate also facilitated the observation of a hitherto unreported form of dielectric cracking, namely cracking from the interconnect along internal interfaces. The observations of dielectric cracking are in agreement with a recent fracture mechanics model. Analysis of the stress data, together with the results of finite element calculations of the strain energy release rate for crack extension, gives a quantitative estimate of the effective valence Z*(=1.3±0.2) for aluminum.

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The residual stress induced in a Pt-aluminide bond coat formed on a single-crystal superalloy has been measured. The stresses arise because of the thermal expansion misfit with the substrate on cooling from the manufacturing temperature. Since the lattice parameters are unknown, the interpretation of diffraction measurements is problematic, and the “wafer” curvature method has been applied. This method required that the substrate thickness be systematically reduced by mechanical thinning. It was also required that curvature measurements be made with the bond coat present as well as after it had been removed by thinning. This approach revealed that the bond coat is in residual tension, 140MPa, consistent with its thermal expansion coefficient, relative to that for the substrate.