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An amplitude modulation circuit architecture featuring a recently published titanium dioxide (TiO 2 ) memristor is proposed. The circuit performance is analysed and simulated with the published physical memristor model under the condition of linear dopant drift. The simulated results demonstrate that the performance is well predicted by the mathematical analysis and supports the viability of the design.Introduction: The announcement of a TiO 2 memristor development by Hewlett Packard [1] has led to significant interest in modelling [2, 3] and application of these devices [1,4,5]. Although many of the proposed applications focus on switching and nonvolatile memory applications, analogue applications as shown in [4] will be of increased interest as memristor technology becomes readily available. In this Letter, an amplitude modulation (AM) circuit utilising a TiO 2 memristor with linear dopant drift is investigated. Both mathematical analysis and simulation results are presented, which demonstrate the feasibility of the memristor in this application.