The small-signal gain coefficient and the saturation intensity of a copper vapor laser have been measured for both 510.6- and 578.2-nm transitions through the implementation of a discharge driven oscillator-amplifier configuration. Pressure dependence of the gain and saturation property of the laser has been investigated.

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A pair of copper bromide lasers in an oscillator-amplifier configuration was used to investigate the temperature dependence of the smallsignal gain, saturation intensity, and output power of the laser. The observations were explained in terms of the electron temperature and energy levels of transition. An optimum electrical input power of 1.6 kW and a corresponding operational temperature of 510 °C were determined for the maximum values of these parameters. The balance between the microscopic parameters, such as stimulated emission crosssection, laser upperlevel lifetime, and population inversion, which determine the behavior of the amplifying parameters and laser output power with respect to the operational temperature, has been investigated. We used the steadystate rate equation from the Hargrove model to determine the amplifying parameters, instead of the Frantz-Nodvik formula. The power extracted from the amplifier exceeds that achieved with the same device as the oscillator by more than 60%.