We provide in this article a comprehensive study of the role of ac cross-talk effects in Kelvin Probe Force Microscopy (KPFM), and their consequences onto KPFM imaging. The dependence of KPFM signals upon internal parameters such as the cantilever excitation frequency and the projection angle of the KPFM feedback loop is reviewed, and compared with an analytical model. We show that ac cross-talks affect the measured KPFM signals as a function of the tip-substrate distance, and thus hamper the measurement of three-dimensional KPFM signals. The influence of ac cross-talks is also demonstrated onto KPFM images, in the form of topography footprints onto KPFM images, especially in the constant distance (lift) imaging mode. Our analysis is applied to unambiguously probe charging effects in tobacco mosaic viruses (TMVs) in ambient air. TMVs are demonstrated to be electrically neutral when deposited on silicon dioxide surfaces, but inhomogeneously negatively charged when deposited on a gold surface. V
The measurement of local surface potentials by Kelvin force microscopy (KFM) can be sensitive to external perturbations which lead to artifacts such as strong dependences of experimental results (typically in a ∼1 V range) with KFM internal parameters (cantilever excitation frequency and/or the projection phase of the KFM feedback-loop). We analyze and demonstrate a correction of such effects on a KFM implementation in ambient air. Artifact-free KFM measurements, i.e., truly quantitative surface potential measurements, are obtained with a ∼30 mV accuracy.
n - and p-type GaN epitaxial layers grown by metal-organic chemical vapor deposition with different doping levels have been characterized by Kelvin probe force microscopy (KFM). To investigate the surface states of GaN beyond instrumental and environmental fluctuations, a KFM calibration procedure using a gold-plated Ohmic contact as a reference has been introduced, and the reproducibility of the KFM measurements has been evaluated. Results show that the Fermi level is pinned for n- and p-type GaN over the available doping ranges, and found 1.34±0.15eV below the conduction band and 1.59±0.18eV above the valence band, respectively.
The operation of a network-embedded colorless selftuning transmitter for WDM networks is experimentally demonstrated from 2.5-up to 10.7-Gb/s data rates. Colorless operation is achieved by self-seeding an ultra-fast reflective semiconductor optical amplifier (RSOA) with the feedback signal reflected at the WDM multiplexer filter. In particular, the transmitter exploits a 2-Faraday rotators configuration to ensure polarization insensitive operation and allowing for the exploitation of high gain RSOAs, which can be designed to operate on a single polarization. The impact on the transmission of the fiber chromatic dispersion at different bit-rates and with different channel bandwidths of the WDM multiplexer filter is experimentally investigated up to 10.7 Gb/s. The tolerance to positive and negative dispersive loads is also assessed.
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