As an induction layer for Si crystallization, an yttria-stabilized zirconia (YSZ) film was deposited on a glass substrate. The YSZ layer, already etched with HF and rinsed with ethanol, was heated to 430 °C. The Si film deposited on it was partially crystallized. This was confirmed by transmission electron microscope. The crystallization fraction was greater than that on a YSZ layer rinsed by deionized water. Without using YSZ layer, deposited Si film was amorphous. F atoms in HF-etching solution were adsorbed on the YSZ layer and remained even after the ethanol rinse. These remaining F may be important for crystallization.
This paper presents a rigorous mathematical justification of the Helmholtz equation least squares (HELS) method for reconstructing acoustic radiation from an arbitrary source. It is shown that the acoustic pressure radiated from a non-spherical structure can be approximated using the spherical wavefunctions and spherical harmonics, and errors involved in this approximation are bounded. This explains why previously the HELS method could be used to produce satisfactory reconstruction of acoustic radiation from various types of structures. In the present paper, these analytical studies are further supported by experimental validation of the reconstruction of acoustic radiation from a typical filing cabinet in both exterior and interior regions.
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