A comprehensive conceptual design for a diode pumped solid state laser (DPSSL) as a driver for an inertial fusion energy (IFE) power plant is presented. This design is based on recent technical advances that offer potential solutions to difficulties previously associated with the use of a laser for IFE applications. The design was selected by using a systems analysis code that optimizes a DPSSL configuration by minimizing the calculated cost of electricity (COE). The code contains the significant physics relevant to the DPSSL driver, but treats the target chamber and balance of plant costs generically using scaling relations published for the Sombrero KrF laser concept. The authors describe the physics incorporated in the code, predict DPSSL performance and its variations with changes in the major parameters, discuss IFE economics and technical risk, and identify the high leverage development efforts that can make DPSSL driven IFE plants more economically competitive. It is believed that this study is a significant advance over previous conceptual studies of DPSSLs for IFE because it incorporates a new cost effective gain medium, applies a potential solution to the 'final optics' problem, and considers the laser physics in substantially greater detail. The result is the introduction of an option for an IFE driver that has relatively low development costs and that builds upon the mature laser technology base already developed for Nova and being developed for the proposed National Ignition Facility. The baseline design of the paper has a product of laser efficiency and target gain of qG -6.6 and a COE of 8.6 centsikW .h for a 1 GW(e) plant with a target gain of 76 at 3.7 MJ.Higher qG ( 2 11) and lower COEs ( 5 6.6 centsikW. h) can be achieved with target gains twice as high.
Deep levels of undoped GaTe and indium-doped GaTe crystals are reported for samples grown by the vertical Bridgman technique. Schottky diodes of GaTe and GaTe:In have been fabricated and characterized using current-voltage, capacitance-voltage, and deep-level transient spectroscopy ͑DLTS͒. Three deep levels at 0.40, 0.59, and 0.67 eV above the valence band were found in undoped GaTe crystals. The level at 0.40 eV is associated with the complex consisting of gallium vacancy and gallium interstitial ͑V Ga -Ga i ͒, the level at 0.59 eV is identified as the tellurium-on-gallium antisite ͑Te Ga ͒, and the last one is tentatively assigned to be the doubly ionized gallium vacancy ͑V Ga ء ͒. Indium isoelectronic doping is found to have noticeable impacts on reducing the Schottky saturation current and suppressing the densities of Te Ga and V Ga ء defects. The peak which dominated the DLTS spectrum of GaTe:In is assigned to be the defect complex consisting of V Ga and indium interstitial ͑In i ͒. Low-temperature photoluminescence ͑PL͒ spectroscopy measurements were performed on GaTe and GaTe:In crystals. A shallow acceptor level at 140 meV corresponding to V Ga was measured in undoped GaTe. Two shallow acceptor levels at 123 and 74 meV corresponding to V Ga and indium-on-gallium antisite In Ga were observed in GaTe:In samples. The PL results suggested that the indium atoms could occupy gallium vacant sites during GaTe crystal growth period and thereby change the electrical and optical properties of GaTe crystal.
Abstract-We have constructed a second-generationCompton coincidence instrument, known as the Scintillator Light Yield Non-proportionality Characterization Instrument (SLYNCI), to characterize the electron response of scintillating materials. While the SLYNCI design includes more and higher efficiency HPGe detectors than the original apparatus (five 25%-30% detectors vs. one 10% detector), the most novel feature is that no collimator is placed in front of the HPGe detectors. Because of these improvements, the SLYNCI data collection rate is over 30 times higher than the original instrument. In this paper, we present a validation study of this instrument, reporting on the hardware implementation, calibration, and performance. We discuss the analysis method and present measurements of the electron response of NaI:Tl from two different samples. We also discuss the systematic errors of the measurement, especially those that are unique to SLYNCI. We find that the apparatus is very stable, but that careful attention must be paid to the energy calibration of the HPGe detectors.
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