The in situ surface modification of InN films by nitrogen (N) radical beam irradiation was investigated using different substrate temperatures, plasma powers, and irradiation times. The changes in the surface morphology and electrical properties of the irradiated InN templates were studied. It was confirmed that N radical beam irradiation could modify the InN template's surface morphology. Furthermore, a comparison with annealing without N radical beam irradiation revealed that the N radical beam irradiation on the InN template could modify the surface morphology of the template and suppress InN thermal decomposition.
The objective of this study was to investigate the repeatability of in situ surface modification by radical beam irradiation to reduce threading dislocation density in InN film. The growth of InN template and N radical irradiation processes were repeated twice in situ in the radio-frequency plasma-excited molecular beam epitaxy chamber before the regrowth of InN film on the N radical irradiated template. Transmission electron microscopy was applied to study dislocation behaviors of the InN film grown. In this letter, we show cross-sectional-view transmission electron microscopy evidence of the threading dislocation reduction from ~2.8×10 10 cm -2 in the first irradiated InN layer to ~2.0×10 10 cm -2 in the second irradiated InN layer, and to ~1.3×10 10 cm -2 in the top regrown InN layer. The mechanisms of threading dislocation reduction were also studied.
The objective of this study was to investigate the relationship between the thickness of N radical irradiated InN template with crystallographic quality and electrical properties of InN film grown with the previously proposed method, in situ surface modification by radical beam irradiation. In this study, three InN samples were grown with this method on different thickness of irradiated templates. The crystallographic quality of InN films was analyzed by X-ray diffraction and the electrical properties were studied by Hall effect measurement. InN grown on 100 nm thick irradiated template shows lower full-width at half-maximum of X-ray rocking curves and lower carrier concentration compared to InN grown on 200 nm and 450 nm thick irradiated templates. Transmission electron microscopy revealed that threading dislocation density in the InN film decreased by an order of magnitude to ∼4.6×109cm-2. These results suggest that this method is possible for reduction of threading dislocation density in InN and the thickness of irradiated template should be minimized for higher crystallographic quality and electrical properties of the entire InN film.
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