The direct band gap electroluminescence (EL) intensity was investigated for asymmetric metal/ Ge/metal diodes fabricated on n-type Ge with doping levels in the range of 4.0×10 13 -3.1×10 18 cm −3 . Up to a doping level of 10 16 cm −3 order, commercially available (100) n-Ge substrates were used. To obtain a doping level higher than 10 17 cm −3 order, which is commercially unavailable, n + -Ge/p-Ge structures were fabricated by Sb doping on p-type (100) Ge substrates with an in-diffusion at 600 °C followed by a push-diffusion at 700 °C-850 °C. The EL intensity was increased with increasing doping level up to 1.0×10 18 cm −3 . After that, it was decreased with a further increase in n-type doping level. This EL intensity decrease is explained by the decreased number of holes in the active region. One reason is the difficulty in hole injection through the PtGe/n-Ge contact due to the occurring of tunneling electron current. Another reason is the loss of holes caused by both the small thickness of n + -Ge layer and the existence of n + p junction.
We have devised a method that employs surface-and self-capacitive sensing principles for touch detection with a single-layered capacitive touch panel. In this method, a single electrode layer consisting of a stripe-shaped one-dimensional electrode array was used to enable multi-touch detection, and a capacitive sensing circuit that uses a trans-impedance amplifier was selected to simplify the circuit structure of the touch panel. The results indicate that the number of the panel fabrication processes and the amount of the touch electrode material required can be reduced by half by using the proposed method. ' 6
We present a novel touch-sensing system that detects the skin resistance of a touched finger using a static capacitive touch panel. The employed frequency-scan method enables us to measure skin resistance regardless of touching conditions. The proposed system can create new touch-sensor applications such as multiuser system and bioelectrical sensing.
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