We fabricated 1550nm-band, p-doped, InAs/InGaAlAs quantum-dot (QD) lasers on an InP(311)B substrate. The device showed extremely high temperature stability and lasing up to 120℃ was confirmed under CW condition.
A 1550 nm‐band InAs/InGaAlAs quantum dot (QD) distributed feedback (DFB) laser is fabricated, in which the side‐wall grating is formed in a simultaneous process with the ridge waveguide, and room‐temperature continuous‐wave single‐mode oscillation is achieved. A rather low‐threshold current density of about 2.2 kA cm−2 is obtained. Side‐mode suppression ratios (SMSRs) are 28 dB just above the threshold current Ith and 44 dB at I/Ith = 2.0. Antireflection (AR) coating suppresses the amplified spontaneous emission (ASE) and increases the slope efficiency by a factor of 1.3.
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