We report a method for high-fidelity lithographic patterning of the flexible β-phase polyvinylidene difluoride (PVDF) film using traditional cleanroom equipment and commercially available materials. In our process, the chemically reactive gas of CHF 3 , CF 4 and SF 6 was used as a simple substance mixed with O 2 . The effects of process parameters on the PVDF dry etching characteristics were investigated by controlling that of Radio frequency (RF) power, process pressure, gas type and the mixed concentration in O 2 as well as its mass flow rate. At a constant RF power (100 W) and associated process conditions, 40-70 μm of fine-line patterns and several tens μm/h of high etch rate could be realized on a 110 μm-thick β-PVDF film without much loss of its piezoelectricity.
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