No abstract

The bottom-up approach through on-surface synthesis of porous graphene nanoribbons (GNRs) presents a controllable manner for implanting periodic nanostructures to tune the electronic properties of GNRs in addition to bandgap engineering by width and edge configurations. However, owing to the existing steric hindrance in small pores like divacancies, it is still difficult to embed periodic divacancies with a nonplanar configuration into GNRs. Here, we demonstrate the on-surface synthesis of atomically precise eight-carbon-wide armchair GNRs embedded with periodic divacancies (DV8-aGNRs) by utilizing the monatomic step edges on the Au(111) surface. From a single molecular precursor correspondingly following a trans-and ciscoupling, the DV8-aGNR and another porous nanographene are respectively formed at step edges and on terraces at 720 and 570 K. Combining scanning tunneling microscopy/spectroscopy, atomic force microscopy, and first-principles calculations, we determine the out-of-plane conformation, wide bandgap (∼3.36 eV), and wiggly shaped frontier orbitals of the DV8-aGNR. Nudged elastic band calculations further quantitatively reveal that the additional steric hindrance effect in the cyclodehydrogenative reactions has a higher barrier of 1.3 eV than that in the planar porous nanographene, which also unveils the important role played by the monatomic Au step and adatoms in reducing the energy barriers and enhancing the thermodynamic preference of the oxidative cyclodehydrogenation. Our results provide the first case of GNRs containing periodic pores as small as divacancies with a nonplanar configuration and demonstrate the strategy by utilizing the chemical heterogeneity of a substrate to promote the formation of novel carbon nanomaterials.

The doping types of graphene sheets are generally tuned by different dopants with either three or five valence electrons. As a five-valence-electrons element, however, nitrogen dopants in graphene sheets have several substitutional geometries. So far, their distinct effects on electronic properties predicted by theoretical calculations have not been well identified. Here, we demonstrate that the doping types of graphene can be tuned by N monoelement under proper growth conditions using chemical vapor deposition (CVD), characterized by combining scanning tunneling microscopy/spectroscopy, X-ray/ultraviolet photoelectron spectroscopy, Hall effect measurement, Raman spectroscopy, and density functional theory calculations. We find that a relatively low partial pressure of CH (mixing with NH) can lead to the growth of dominant pyridinic N substitutions in graphene, in contrast with the growth of dominant graphitic N substitutions under a higher partial pressure of CH. Our results unambiguously confirm that the pyridinic N leads to the p-type doping, and the graphitic N leads to the n-type doping. Interestingly, we also find that the pyridinic N and the graphitic N are preferentially separated in different domains. Our findings shed light on continuously tuning the doping level of graphene monolayers by using N monoelement, which can be very convenient for growth of functional structures in graphene sheets.