In this work, we investigate that the capping layer (CL) engineering of aluminum oxide (AlOx) on the dopant-free hafnium oxide (HfOx) and the hafnium zirconium oxide (HfZrOx) ferroelectric metal-ferroelectric-metal (MFM) capacitors. The AlOx CL featuring large bandgap and excellent thermal stability offers a stable interface favorable for ferroelectric phase transition. Therefore, the ferroelectric polarization and high-temperature leakage current of HfZrOx MFM capacitor can be largely improved due to the combination of zirconium doping and AlOx capping effect. From the analysis of interface thermodynamic stability and leakage current mechanism, the AlOx CL effectively alleviates interface defect traps between electrode and ferroelectric HfZrOx, which lowers high-temperature leakage current, reduces ferroelectric domains pinning, enhances ferroelectric polarization, and stabilizes the long-term endurance cycling.
Consumers considering whether or not to queue make their decisions based on queuing size and the expecting waiting time. If a consumer is frustrated because he / she cannot know how long will wait, he / she will quit from a Consumers who are frustrated because they do not know how long they must wait will quit a queue or ask someone for help if the good is worthy to pay more money to own. If a good is worth waiting to purchase, a consumer will chose waiting or buying the privilege to get the good. However, a long wait causes customers to have negative feelings about the queue. Frustration also has a substantial effect on customer loyalty to a good. Therefore, the relationship between perceived waiting time and paying for queuers to buy the good is worth studying. Frustration is a moderating effect that is also worth studying. In the formal study, to make the frustrating emotion, the authors asked all participants to have a contest before they can take the tickets to enter a queue for taking the ticket to a famous concert in Taiwan. The questions used in the contest had different levels of difficulty. However, the difficulty of the questions must be verified before the formal experiment. Therefore, the 60 participants in this pilot study were asked 40 questions in history, mathematics, and Chinese to find the most difficult ten questions and the less difficulty ten questions for the formal test.
In this work, we investigate the ferroelectricity of stacked zirconium oxide and hafnium oxide (stacked HfZrO) with different thickness ratios under metal gate stress and simultaneously evaluate the electrical reliability of stacked ferroelectric films. Based on experimental results, we find that the stacked HfZrO films not only exhibited excellent ferroelectricity but also demonstrated a high performance on reliability. The optimized condition of the 45% Zr proportion exhibited a robust ferroelectric polarization value of 32.57 μC/cm2, and a polarization current with a peak value of 159.98 μA. Besides this, the ferroelectric stacked HfZrO also demonstrated good reliability with a ten-year lifetime under >−2 V constant voltage stress. Therefore, the appropriate modulation of zirconium proportion in stacked HfZrO showed great promise for integrating in high-performance ferroelectric memory.
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