Seeking controllable and efficient surface dopant molecules for transition‐metal dichalcogenides (TMDCs) is highly valuable for fully understanding TMDCs properties and their applications to relevant devices. The general doping effect of solvents on TMDCs are explored. By selecting suitable solvents with optimized relevant factors, controllable n‐doping of molybdenum disulfide (MoS2) is obtained on the same device with the sheet density of electrons increased from 2.3 × 1011 to 6.4 × 1012, 9.7 × 1012, and 1.6 × 1013 by use of dimethylsulfoxide, N,N‐dimethylformamide, and N‐methyl‐pyrrolidone (NMP), respectively. The doping principle is explained by charge‐donating characteristics of molecule and dipole interaction. After doping by NMP, the contact resistance is reduced by four times, and the on/off current ratio of fabricated top‐gated MoS2 transistors is increased by 3 orders of magnitude. This work can guide the selection of suitable solvents for effective doping of two‐dimensional materials and advance the development of precise controllable electronic and optoelectronic devices.

Applied strain introduces significant changes in the carbon–carbon bond of graphene and thereby forms electronic superlattices. The electron/phonon coupling and existence of pseudogauge fields within these superlattices render unique electronic and magnetism properties. However, the interfacial interactions between strained and pristine graphene have rarely been studied. Herein, we report a prominent increase in photocurrent at the interface between pristine graphene and the strain-induced superlattice (i.e., the graphene wrinkle). The photocurrent distribution indicates a large increase in the bending lattice of graphene. These results demonstrate that the photocurrent enhancement is due to the difference in the Seebeck coefficient between pristine graphene and deformed superlattices, resulting in a significant increase in the photo­thermo­electric effect at the interface.

Twisted bilayer graphene (TBG), which has drawn much attention in recent years, arises from van der Waals materials gathering each component together via van der Waals force. It is composed of two sheets of graphene rotated relatively to each other. Moiré potential, resulting from misorientation between layers, plays an essential role in determining the band structure of TBG, which directly relies on the twist angle. Once the twist angle approaches a certain critical value, flat bands will show up, indicating the suppression of kinetic energy, which significantly enhances the importance of Coulomb interaction between electrons. As a result, correlated states like correlated insulators emerge from TBG. Surprisingly, superconductivity in TBG is also reported in many experiments, which drags researchers into thinking about the underlying mechanism. Recently, the interest in the atomic reconstruction of TBG at small twist angles comes up and reinforces further understandings of properties of TBG. In addition, twisted multilayer graphene receives more and more attention, as they could likely outperform TBG although they are more difficult to handle experimentally. In this review, we mainly introduce theoretical and experimental progress on TBG. Besides the basic knowledge of TBG, we emphasize the essential role of atomic reconstruction in both experimental and theoretical investigations. The consideration of atomic reconstruction in small-twist situations can provide us with another aspect to have an insight into physical mechanism in TBG. In addition, we cover the recent hot topic, twisted multilayer graphene. While the bilayer situation can be relatively easy to resolve, multilayer situations can be really complicated, which could foster more unique and novel properties. Therefore, in the end of the review, we look forward to future development of twisted multilayer graphene.

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Strain engineering is the most effective method to break the symmetry of the graphene lattice and achieve graphene band gap tunability. However, a critical strain (>20%) is required to open the graphene band gap, and it is very difficult to achieve such a large strain. This limits the development of experimental research and optoelectronic devices based on graphene strain. In this work, we report a method for preparing large-strain graphene superlattices via surface energy engineering. The maximum strain of the curved lattice could reach 50%. In particular, our pioneering work reports the behavior of an ultrafast (as short as 6 ps) photoresponse in a strained folded graphene superlattice. The photocurrent map shows a large increase (up to 10 2 ) of the photoresponsivity in the tensile graphene lattice, which is generated by the interaction between the strained and pristine graphene. Through Raman spectroscopy, Kelvin probe force microscopy, and high-resolution transmission electron microscopy, we demonstrate that the ultrathreshold strain in the graphene bends triggers the opening of the graphene band gap and results in a unique photovoltaic effect. This work deepens the understanding of the strain-induced change of the photoelectrical properties of graphene and proves the potential of strained graphene as a platform for the generation of novel highspeed, miniaturized graphene-based photodetectors.