Two-dimensional phosphorene with desirable optoelectronic properties (ideal band gap, high carrier mobility, and strong visible light absorption) is a promising metal-free photocatalyst for water splitting. However, the band edge positions of the valence band maximum (VBM) and conduction band maximum (CBM) of phosphorene are higher than the redox potentials in photocatalytic water splitting reactions. Thus, phosphorene can only be used as the photocathode for hydrogen evolution reaction as a low-efficiency visible-light-driven photocatalyst for hydrogen production in solar water splitting cells. Here, we propose a new mechanism to improve the photocatalytic efficiency of phosphorene nanoribbons (PNRs) by modifying their edges for full reactions in photocatalytic water splitting. By employing first-principles density functional theory calculations, we find that pseudohalogen (CN and OCN) passivated PNRs not only show desired VBM and CBM band edge positions induced by edge electric dipole layer, but also possess intrinsic optoelectronic properties of phosphorene, for both water oxidation and hydrogen reduction in photocatalytic water splitting without using extra energy. Furthermore, our calculations also predict that the maximum energy conversion efficiency of heterojunction solar cells consisting of different edge-modified PNRs can be as high as 20% for photocatalytic water splitting.
Oxides of two-dimensional (2D) atomic crystals have been widely studied due to their unique properties. In most 2D oxides, oxygen acts as a functional group, which makes it difficult to control the degree of oxidation. Because borophene is an electron-deficient system, it is expected that oxygen will be intrinsically incorporated into the basal plane of borophene, forming stoichiometric 2D boron oxide (BO) structures. By using first-principles global optimization, we systematically explore structures and properties of 2D BO systems with well-defined degrees of oxidation. Stable B-O-B and OB tetrahedron structure motifs are identified in these structures. Interesting properties, such as strong linear dichroism, Dirac node-line (DNL) semimetallicity, and negative differential resistance, have been predicted for these systems. Our results demonstrate that 2D BO represents a versatile platform for electronic structure engineering via tuning the stoichiometric degree of oxidation, which leads to various technological applications.
Recent discovery of superconductivity in the doped infinite-layer nickelates has renewed interest in understanding the nature of high-temperature superconductivity more generally. The low-energy electronic structure of the parent compound NdNiO2, the role of electronic correlations in driving superconductivity, and the possible relationship between the cuprates and the nickelates are still open questions. Here, by comparing LaNiO2 and NdNiO2 systematically within a parameter-free, all-electron first-principles density-functional theory framework, we reveal the role of Nd 4f electrons in shaping the ground state of pristine NdNiO2. Strong similarities are found between the electronic structures of LaNiO2 and NdNiO2, except for the effects of the 4f electrons. Hybridization between the Nd 4f and Ni 3d orbitals is shown to significantly modify the Fermi surfaces of various magnetic states. In contrast, the competition between the magnetically ordered phases depends mainly on the gaps in the Ni $$3{d}_{{x}^{2}-{y}^{2}}$$ 3 d x 2 − y 2 band. Our estimated value of the on-site Hubbard U in the nickelates is similar to that in the cuprates, but the value of the Hund’s coupling JH is found to be sensitive to the Nd magnetic moment. In contrast with the cuprates, NdNiO2 presents 3D magnetism with competing antiferromagnetic and (interlayer) ferromagnetic exchange, which may explain why the Tc is lower in the nickelates.
Using first-principles calculations, we perform a comprehensive study of representative metal (Al, Sc, Pd, Ag, Pt, and Au) contacts with monolayer (ML) and bilayer (BL) CN, which is a low-cost and easily synthesized two-dimensional metal-free semiconductor. Through analyzing the geometries, electronic structures, and Fermi level pinning effects of CN-metal interfaces, we find metals Al and Sc top contact with ML CN are Ohmic, which can be ascribed to the strong interactions and large orbital overlaps. Besides, owing to weak van der Waals interactions at interfaces and low work functions of metallic materials, Ohmic contacts can also be realized in ML/BL CN-Ag and BL CN-Sc systems. Furthermore, it was also predicted that CN-Sc and CN-Ag systems still maintain Ohmic features along the edge contacts. Given the lower resistance of the Ag electrode, the CN-Ag electrode should be a more attractive electrode in practical applications. These predictions not only provide insights into the fundamental properties of the layered CN-metal interfaces but also pave way to design high-performance devices using low-cost layered CN.
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