No abstract

Single-component materials with both fluorescence and room-temperature phosphorescence (RTP) are useful for ratiometric sensing and imaging applications. On the basis of a general design principle, an amino-substituted benzophenone is covalently incorporated into waterborne polyurethanes (WPU) and results in fluorescence and RTP single-component dual-emissive materials (SDMs). At different aminobenzophenone concentrations, the statistical, thermal, and optical properties of these SDMs are characterized. Despite their similar thermal behaviors, the luminescence properties as a function of the chromophore concentration are quite different: increasing concentrations led to progressively narrowed singlet-triplet energy gaps. The tunability of fluorescence and RTP via chromophore concentration is explained by a previously proposed model, polymerization-enhanced intersystem crossing (PEX). The proposal of PEX is based on Kasha's molecular exciton theory with a specific application in polymeric systems, where the polymerization of luminophores results in excitonic coupling and enhanced forward and reverse intersystem crossing. The mechanism of PEX is also examined by theoretical calculations for the WPU system. It is found that the presence of K1 aggregates indeed enhances the crossover from singlet excited states to triplet ones.

Direct bandgap III-V semiconductor lasers grown on silicon (Si) are highly desired for monolithic integration with Si photonics. Fabrication of semiconductor lasers with a Fabry–Pérot cavity usually includes facet cleavage, however, that is not compatible with on-chip photonic integration. Etching as an alternative approach holds a great advantage in preparing cavity mirrors with no need of breaking wafer into bars. However, gallium nitride (GaN) sidewalls prepared by dry etching often have a large roughness and etching damages, which would cause mirror loss due to optical scattering and carrier injection loss because of surface non-radiative recombination. A wet chemical polishing process of GaN sidewall facets formed by dry etching was studied in detail to remove the etching damages and smooth the vertical sidewalls. The wet chemical polishing technique combined with dry etching was successfully applied to the on-wafer fabrication of cavity mirrors, which enabled the realization of room temperature electrically injected InGaN-based laser diodes grown on Si.