Scanning electro-optic microscopy of ferroelectric domain structure with a near-field fiber probe J. Appl. Phys. 110, 084117 (2011) Ferroelectric domains in epitaxial PbTiO3 films on LaAlO3 substrate investigated by piezoresponse force microscopy and far-infrared reflectance J. Appl. Phys. 110, 084115 (2011) Domain size engineering in tetragonal Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 crystals J. Appl. Phys. 110, 084110 (2011) Effects of surface tension on the size-dependent ferroelectric characteristics of free-standing BaTiO3 nano-thin films J. Appl. Phys. 110, 084108 (2011) Electromechanical properties and anisotropy of single-and multi-domain 0.72Pb(Mg1/3Nb2/3)O3-0.28PbTiO3 single crystals Appl. Phys. Lett. 99, 162901 (2011) Additional information on J. Appl. Phys. In this article, a general variational formulation is established for the dynamics of domain switching in ferroelectric thin films. By incorporating the kinetic energy in the Landau free energy expansion, we obtain a second-order time-dependent Ginzburg-Landau evolution equation, which can be used to analyze the frequency-dependent dielectric and ferroelectric properties of the materials. A numerical model is developed to calculate the time-dependent polarization and electric-field distribution during the domain switching process. As an example of practical importance, a ferroelectric film with 180°domain boundaries perpendicular to the film surface is studied. Domain switching is found to proceed in two stages, the initial nucleation and growth of the ferroelectric domain, followed by the expansion of the domain through the sidewise motion of the 180°domain walls, until the spontaneous polarization in the entire electrified area is reversed.
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