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In this work, we aim to determine the electric resistivities of liquid Sb2Te3 and Ge2Sb2Te5. Electric resistivities were measured using the four-terminal method. First, the electric resistivities of liquid Ga and Sn were measured to establish this method. Second, the electric resistivities of Sb2Te3 and Ge1.6Sb2.0Te5.0 were measured over temperature ranges between the respective melting temperatures of samples and 1020 K. The electric resistivity of Sb2Te3 has been determined to be 4.36±0.14 µΩ m at 992 K. The uncertainty was determined on the basis of the guide to the expression of uncertainty in measurement. The electric resistivity of Ge1.6Sb2.0Te5.0 is smaller than that of Sb2Te3. It is also found that both resistivities decrease with an increase in temperature; which indicates that both liquid materials behave as a semiconductor. Therefore, the pseudogap model was applied to derive the electrical activation energies.

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GeTe alloy has drawn much attention as one of the promising candidates for phase change memory application. In this work, the electrical resistivities and thermal conductivities of GeTe alloy have been determined as functions of temperature by the four-terminal method and hot strip method, respectively. The electrical resistivity increases and the thermal conductivity decreases monotonically with increasing temperature, and thus it is likely that free electron dominates the thermal conduction. The electrical resistivity increases slowly with time during holding at 773 K, and the thermal conductivity decreases corresponding to the change of the electrical resistivity, which suggests that small amount of high temperature phase might exist in the samples. V C 2012 American Institute of Physics. [http://dx.